Student's GaN Transistor More Powerful, Energy-Efficient Than Silicon Chip

May 15, 2008 6:40 a.m. EST

Troy, NY (AHN) - A doctoral student at Rensselaer Polytechnic Institute has invented a new all-weather transistor that is more powerful, energy-efficient, smaller and cheaper than the conventional silicon chip.

The high-performance gallium nitride (GaN)-based transistor of Weixiao Huang is touted to replace the silicon transistor used to power motor drives, hybrid vehicles, home appliances, defense equipment and other electronics products.

Huang's innovation also can integrate several important electronic functions onto one chip. According to Rpi.com, Huang said, "This will significantly simplify entire electronic systems."

The GaN transistor's lower power consumption also has the potential of reducing global warming. Rpi.com quoted Huang as saying, "If these new GaN transistors replaced many existing silicon MOSFETs in power electronics systems, there would be global reduction in fossil fuel consumption and pollution," Huang said.

MOSFET refers to the conventional electronic component metal/oxide semiconductor field-effect transistor.